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 CM400HA-24A
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMODTM A-Series Module
400 Amperes/1200 Volts
H J K
G
F
E
D W - DIA. (4 TYP.)
y
E
PQ E
G
x
C
N
M
L
C B A V -THD. (2 TYP.) U - THD. (2 TYP.) R
T
S
Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking
E
E
C
G
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 4.25 3.66 0.63 0.30 0.69 1.14 0.79 0.94 0.31 0.24 2.44 1.89 Millimeters 108.0 93.0 16.0 7.5 30C0686.eps 17.5 29.0 20.0 24.0 7.9 6.0 62.0 48.0 Dimensions N P Q R S T U V W X Y Inches 0.39 0.39 0.51 0.33 1.42 1.02 M6 Metric M4 Metric 0.256 0.79 0.35 Millimeters 10.0 10.0 13.0 8.5 36.0 25.8 M6 M4 6.5 20.0 9.0
Applications: DC Chopper Inverter UPS Forklift Ordering Information: Example: Select the complete part module number you desire from the table below i.e. CM400HA-24A is a 1200V (VCES), 400 Ampere Single IGBTMODTM Power Module.
Type CM Current Rating Amperes 400 VCES Volts (x 50) 24
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400HA-24A Single IGBTMODTM A-Series Module 400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E Short) Gate-Emitter Voltage (C-E Short) Collector Current (DC, TC = 87C*) Peak Collector Current Emitter Current*** (TC = 25C) Peak Emitter Current*** Maximum Collector Dissipation (TC = 25C*, Tj 150C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 G(E) Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM PC -- -- -- -- VISO CM400HA-24A -40 to 150 -40 to 125 1200 20 400 800** 400 800** 2350 40 40 15 480 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Total Gate Charge Emitter-Collector Voltage** Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 15V, Tj = 25C IC = 400A, VGE = 15V, Tj = 125C VCC = 600V, IC = 400A, VGE = 15V IE = 400A, VGE = 0V Min. -- -- 6.0 -- -- -- -- Typ. -- -- 7.0 2.1 2.4 2000 -- Max. 1.0 0.5 8.0 3.0 -- -- 3.8 Units mA A Volts Volts Volts nC Volts
Dynamic Electrical Characteristics, Tj = 25C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 400A, VGE1 = VGE2 = 15V, RG = 0.78, Inductive Load Switching Operation, IE = 400A VCE = 10V, VGE = 0V Test Conditions Min. -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- -- -- -- -- 14.7 Max. 70 6 1.4 550 180 600 350 250 -- Units nf nf nf ns ns ns ns ns C
Diode Reverse Recovery Time*** Diode Reverse Recovery Charge***
*TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400HA-24A Single IGBTMODTM A-Series Module 400 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case* Thermal Resistance, Junction to Case* Contact Thermal Resistance External Gate Resistance
*TC, Tf measured point is just under the chips.
Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) RG
Test Conditions Per IGBT Per FWDi Thermal Grease Applied
Min. -- -- -- 0.78
Typ. -- -- 0.02 --
Max. 0.053 0.085 -- 10
Units C/W C/W C/W
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
800
COLLECTOR CURRENT, IC, (AMPERES)
15
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
13
Tj = 25oC
12
4
10
VGE = 15V Tj = 25C Tj = 125C
Tj = 25C IC = 800A
600
3
8 6 4 2 0
IC = 160A
400
11
2
IC = 400A
200
10
1
9
0
0
2
4
6
8
10
0
0
200
400
600
800
6
8
10
12
14
16
18
20
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
103
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
102
Cies
103
td(off) tf td(on)
101
Coes
SWITCHING TIME, (ns)
102
102
tr VCC = 600V VGE = 15V RG = 0.78 Tj = 125C Inductive Load
100
Cres
Tj = 25C Tj = 125C
VGE = 0V
101
0
1
2
3
4
5
10-1 10-1
100
101
102
101 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400HA-24A Single IGBTMODTM A-Series Module 400 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
GATE CHARGE VS. VGE
SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL)
103
REVERSE RECOVERY, Irr, trr, (ns)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
VCC = 400V VCC = 600V
SWITCHING LOSS, (mJ/PULSE)
VCC = 600V VGE = 15V RG = 0.78 Tj = 25C Inductive Load
20 16 12 8 4 0
IC = 400A
102
Eon
Eoff
Err
102
101
VCC = 600V VGE = 15V RG = 0.78 Tj = 125C Inductive Load
Irr trr
101 101
102
EMITTER CURRENT, IE, (AMPERES)
103
0
600
1200
1800
2400
3000
100 101
GATE CHARGE, QG, (nC)
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES)
102
103
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE)
SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL)
103
SWITCHING LOSS, (mJ/PULSE)
VCC = 600V VGE = 15V IC = 400A Tj = 125C Inductive Load Eon
100
10-3
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi)
10-2
10-1
100
101
10-1
102
Eoff
10-2
Err
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.053C/W (IGBT) Rth(j-c) = 0.085C/W (FWDi)
10-1
10-2
101
0
2
GATE RESISTANCE, RG, ()
4
6
8
10
10-3
10-5
TIME, (s)
10-4
10-3 10-3
4


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